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1/14 automotive specific october 2002 stp200nf03 STB200NF03 STB200NF03-1 n-channel 30v - 0.0032 w - 120a d 2 pak/i 2 pak/to-220 stripfet? ii power mosfet n typical r ds (on) = 0.0032 w n standard threshold drive n 100% avalanche tested description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high switching speed n dc-dc & dc-ac converters n solenoid and relay drivers type v dss r ds(on) i d STB200NF03/-1 stp200nf03 30 v 30 v <0.0036 w <0.0036 w 120 a (**) 120 a (**) 1 2 3 1 3 1 2 3 to-220 d 2 pak to-263 i 2 pa k to-262 internal schematic diagram ordering information absolute maximum ratings ( ) pulse width limited by safe operating area. (**) current limited by package (1) i sd 120a, di/dt 400a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 60 a, v dd = 25 v sales type marking package packaging STB200NF03t4 b200nf03 d 2 pak tape & reel stp200nf03 p200nf03 to-220 tube STB200NF03-1 b200nf03 i 2 pak tube symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 20 v i d (**) drain current (continuous) at t c = 25c 120 a i d drain current (continuous) at t c = 100c 120 a i dm ( ) drain current (pulsed) 480 a p tot total dissipation at t c = 25c 300 w derating factor 2.0 w/c dv/dt (1) peak diode recovery voltage slope 1.5 v/ns e as (2) single pulse avalanche energy 1.45 j t stg storage temperature -55 to 175 c t j operating junction temperature
STB200NF03/-1 stp200nf03 2/14 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb rthj-pcb t l thermal resistance junction-case thermal resistance junction-ambient thermal resistance junction-pcb maximum lead temperature for soldering purpose (for 10 sec. 1.6 mm from case) max max max typ 0.5 62.5 see curve on page 6 300 c/w c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 60 a 0.0032 0.0036 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 60 a 200 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 4950 1750 280 pf pf pf
3/14 STB200NF03/-1 stp200nf03 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v i d = 60 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 30 195 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24v i d = 120a v gs = 10v 113 32 41 140 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v i d = 60 a r g = 4.7 w, v gs = 10 v (resistive load, figure 3) 75 60 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 120 480 a a v sd (*) forward on voltage i sd = 120 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) 70 170 5 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STB200NF03/-1 stp200nf03 4/14 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/14 STB200NF03/-1 stp200nf03 . . normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. power derating vs tc max id current vs tc .
STB200NF03/-1 stp200nf03 6/14 allowable iav vs. time in avalanche thermal resistance rthj-a vs pcb copper area max power dissipation vs pcb copper area the previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: p d(ave) = 0.5 * (1.3 * bv dss * i av ) e as(ar) = p d(ave) * t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche to derate above 25 o c, at fixed i av , the following equation must be applied: i av = 2 * (t jmax - t case )/ (1.3 * bv dss * z th ) where: z th = k * r th is the value coming from normalized thermal response at fixed pulse width equal to t av .
7/14 STB200NF03/-1 stp200nf03 parameter node value ctherm1 5 - 4 0.011 ctherm2 4 - 3 0.0012 ctherm3 3 - 2 0.05 ctherm4 2 - 1 0.1 rtherm1 5 - 4 0.09 rtherm2 4 - 3 0.02 rtherm3 3 - 2 0.11 rtherm4 2 - 1 0.17 spice thermal model
STB200NF03/-1 stp200nf03 8/14 fig. 4.1: gate charge test waveform fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 3.1: switching time waveform fig. 4: gate charge test circuit
9/14 STB200NF03/-1 stp200nf03 fig. 5: diode switching test circuit fig. 5.1: diode recovery times waveform
STB200NF03/-1 stp200nf03 10/14 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
11/14 STB200NF03/-1 stp200nf03 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
STB200NF03/-1 stp200nf03 12/14 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
13/14 STB200NF03/-1 stp200nf03 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
STB200NF03/-1 stp200nf03 14/14 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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